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[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - The impact of substrate bias on RTS and flicker noise in MOSFETs operating under switched gate bias

Zanolla, Nicola, Siprak, Domagoj, Tiebout, Marc, Baumgartner, Peter, Sangiorgi, Enrico, Fiegna, Claudio

Année:

2008

Langue:

english

Fichier:

PDF, 1.05 MB

english, 2008

Social genes are selection hotspots in kin groups of a soil microbe

Wielgoss, Sébastien, Wolfensberger, Rebekka, Sun, Lei, Fiegna, Francesca, Velicer, Gregory J.

Journal:

Science

Année:

2019

Langue:

english

Fichier:

PDF, 417 KB

english, 2019

The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs

Enrico Sangiorgi, Pierpaolo Palestri, David Esseni, Claudio Fiegna, Luca Selmi

Journal:

Solid-State Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 347 KB

english, 2008

Analysis of thermal noise in scaled MOS devices and RF circuits

Sergio Spedo, Claudio Fiegna

Journal:

Solid-State Electronics

Année:

2002

Langue:

english

Fichier:

PDF, 186 KB

english, 2002

Computational efficient RCWA method for simulation of thin film solar cells

Semenikhin, I., Zanuccoli, M., Benzi, M., Vyurkov, V., Sangiorgi, E., Fiegna, C.

Journal:

Optical and Quantum Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 303 KB

english, 2012

Analysis of quantum effects in nonuniformly doped MOS structures

Fiegna, C., Abramo, A.

Journal:

IEEE Transactions on Electron Devices

Année:

1998

Langue:

english

Fichier:

PDF, 100 KB

english, 1998

Analysis of gate shot noise in MOSFETs with ultrathin gate oxides

Fiegna, C.

Journal:

IEEE Electron Device Letters

Année:

2003

Langue:

english

Fichier:

PDF, 262 KB

english, 2003

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Understanding negative bias temperature stress in p-channel trench-gate power MOSFETs by low-frequency noise measurement

Magnone, P., Barletta, G., Traverso, P.A., Magri, A., Sangiorgi, E., Fiegna, C.

Année:

2014

Langue:

english

Fichier:

PDF, 1.28 MB

english, 2014

TCAD investigation on hot-electron injection in new-generation technologies

Reggiani, S., Rossetti, M., Gnudi, A., Tallarico, A.N., Molfese, A., Manzini, S., Depetro, R., Croce, G., Sangiorgi, E., Fiegna, C.

Journal:

Microelectronics Reliability

Année:

2018

Langue:

english

Fichier:

PDF, 1.16 MB

english, 2018

Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation

Simone Eminente, Marco Alessandrini, Claudio Fiegna

Journal:

Solid-State Electronics

Année:

2004

Langue:

english

Fichier:

PDF, 320 KB

english, 2004

Monte-Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs

N. Barin, P. Palestri, C. Fiegna

Journal:

Solid-State Electronics

Année:

2007

Langue:

english

Fichier:

PDF, 299 KB

english, 2007

Simulation of self-heating effects in different SOI MOS architectures

M. Braccioli, G. Curatola, Y. Yang, E. Sangiorgi, C. Fiegna

Journal:

Solid-State Electronics

Année:

2009

Langue:

english

Fichier:

PDF, 621 KB

english, 2009

Monte-Carlo simulation of MOSFETs with band offsets in the source and drain

M. Braccioli, P. Palestri, M. Mouis, T. Poiroux, M. Vinet, G. Le Carval, C. Fiegna, E. Sangiorgi, S. Deleonibus

Journal:

Solid-State Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 198 KB

english, 2008

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

P. Palestri, C. Alexander, A. Asenov, V. Aubry-Fortuna, G. Baccarani, A. Bournel, M. Braccioli, B. Cheng, P. Dollfus, A. Esposito, D. Esseni, C. Fenouillet-Beranger, C. Fiegna, G. Fiori, A. Ghetti, G.

Journal:

Solid-State Electronics

Année:

2009

Langue:

english

Fichier:

PDF, 1.23 MB

english, 2009

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

Abramo, A., Baudry, L., Brunetti, R., Castagne, R., Charef, M., Dessenne, F., Dollfus, P., Dutton, R., Engl, W.L., Fauquembergue, R., Fiegna, C., Fischetti, M.V., Galdin, S., Goldsman, N., Hackel, M.,

Journal:

IEEE Transactions on Electron Devices

Année:

1994

Langue:

english

Fichier:

PDF, 746 KB

english, 1994

Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation

Fiegna, C., Yang Yang, Sangiorgi, E., O'Neill, A.G.

Journal:

IEEE Transactions on Electron Devices

Année:

2008

Langue:

english

Fichier:

PDF, 351 KB

english, 2008

Reduction of RTS Noise in Small-Area MOSFETs Under Switched Bias Conditions and Forward Substrate Bias

Zanolla, N., Siprak, D., Tiebout, M., Baumgartner, P., Sangiorgi, E., Fiegna, C.

Journal:

IEEE Transactions on Electron Devices

Année:

2010

Langue:

english

Fichier:

PDF, 343 KB

english, 2010

Optimization of Rear Point Contact Geometry by Means of 3-D Numerical Simulation

R. De Rose, K. Van Wichelen, L. Tous, J. Das, F. Dross, C. Fiegna, M. Lanuzza, E. Sangiorgi, A. Uruena De Castro, M. Zanuccoli

Journal:

Energy Procedia

Année:

2012

Langue:

english

Fichier:

PDF, 527 KB

english, 2012

Understanding the Impact of the Doping Profiles on Selective Emitter Solar Cell by Two-Dimensional Numerical Simulation

De Rose, Raffaele, Zanuccoli, Mauro, Magnone, Paolo, Frei, M., Sangiorgi, Enrico, Fiegna, Claudio

Journal:

IEEE Journal of Photovoltaics

Année:

2013

Langue:

english

Fichier:

PDF, 1.81 MB

english, 2013

[IEEE 2011 37th IEEE Photovoltaic Specialists Conference (PVSC) - Seattle, WA, USA (2011.06.19-2011.06.24)] 2011 37th IEEE Photovoltaic Specialists Conference - Numerical simulation and modeling of rear point contact solar cells

Zanuccoli, M., De Rose, R., Magnone, P., Frei, M., Guo, H.-W., Agrawal, M., Sangiorgi, E., Fiegna, C.

Année:

2011

Langue:

english

Fichier:

PDF, 3.62 MB

english, 2011

[IEEE 2011 IEEE 4th International Nanoelectronics Conference (INEC) - Tao-Yuan, Taiwan (2011.06.21-2011.06.24)] The 4th IEEE International NanoElectronics Conference - Application of RCWA method to optoelectronic numerical simulations of 2D nanostructures

Semenikhin, I., Zanuccoli, M., Vyurkov, V., Sangiorgi, E., Fiegna, C.

Année:

2011

Langue:

english

Fichier:

PDF, 1.15 MB

english, 2011

Latch-up testing in CMOS IC's

Menozzi, R., Lanzoni, M., Fiegna, C., Sangiorgi, E., Ricco, B.

Journal:

IEEE Journal of Solid-State Circuits

Année:

1990

Langue:

english

Fichier:

PDF, 511 KB

english, 1990

[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Solution of 1-D Schrodinger and Poisson equations double gate SOI MOS

Fiegna, C., Abramo, A.

Année:

1997

Langue:

english

Fichier:

PDF, 342 KB

english, 1997

[IEEE ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, UK (2008.09.15-2008.09.19)] ESSDERC 2008 - 38th European Solid-State Device Research Conference - Reduction of low-frequency noise in MOSFETs under switched gate and substrate bias

Siprak, Domagoj, Zanolla, Nicola, Tiebout, Marc, Baumgartner, Peter, Fiegna, Claudio

Année:

2008

Langue:

english

Fichier:

PDF, 192 KB

english, 2008

Numerical simulation and modeling of thermal transient in silicon power devices

Magnone, P., Fiegna, C., Greco, G., Bazzano, G., Rinaudo, S., Sangiorgi, E.

Journal:

Solid-State Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 691 KB

english, 2013

[IEEE 2011 12th International Conference on Ultimate Integration on Silicon (ULIS) - Cork, Ireland (2011.03.14-2011.03.16)] Ulis 2011 Ultimate Integration on Silicon - Modeling of thermal network in silicon power MOSFETs

Magnone, Paolo, Fiegna, Claudio, Greco, Giuseppe, Bazzano, Gaetano, Sangiorgi, Enrico, Rinaudo, Salvatore

Année:

2011

Langue:

english

Fichier:

PDF, 260 KB

english, 2011

Three-dimensional effects in dynamically triggered CMOS latchup

Fiegna, C., Selmi, L., Sangiorgi, E., Ricco, B.

Journal:

IEEE Transactions on Electron Devices

Année:

1989

Langue:

english

Fichier:

PDF, 798 KB

english, 1989

Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications

Paternoster, G., Zanuccoli, M., Bellutti, P., Ferrario, L., Ficorella, F., Fiegna, C., Magnone, P., Mattedi, F., Sangiorgi, E.

Journal:

Solar Energy Materials and Solar Cells

Année:

2015

Langue:

english

Fichier:

PDF, 2.49 MB

english, 2015

SIMULATION OF THERMAL NOISE IN SCALED MOSFETS

SPEDO, SERGIO, FIEGNA, CLAUDIO

Journal:

Fluctuation and Noise Letters

Année:

2002

Langue:

english

Fichier:

PDF, 143 KB

english, 2002

Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs

Tallarico, Andrea Natale, Magnone, Paolo, Barletta, Giacomo, Magrì, Angelo, Sangiorgi, Enrico, Fiegna, Claudio

Journal:

Solid-State Electronics

Année:

2015

Langue:

english

Fichier:

PDF, 723 KB

english, 2015

A Distributed Electrical Model for Interdigitated back Contact Silicon Solar Cells

Giaffreda, Daniele, Debucquoy, Maarten, Magnone, Paolo, Posthuma, Niels, Fiegna, Claudio

Journal:

Energy Procedia

Année:

2014

Langue:

english

Fichier:

PDF, 456 KB

english, 2014

[Presses Polytech. Univ. Romandes ISCAS 2000 Geneva. 2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings - Geneva, Switzerland (28-31 May 2000)] 2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353) - The effects of scaling on the performance of small-signal MOS amplifiers: a physics-based simulation study

Fiegna, C.

Année:

2000

Langue:

english

Fichier:

PDF, 316 KB

english, 2000

Investigation of the p-GaN Gate Breakdown in Forward-biased GaN-based Power HEMTs

Tallarico, Andrea Natale, Stoffels, Steve, Magnone, Paolo, Posthuma, Niels, Sangiorgi, Enrico, Decoutere, Stefaan, Fiegna, Claudio

Journal:

IEEE Electron Device Letters

Année:

2016

Langue:

english

Fichier:

PDF, 776 KB

english, 2016

PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

Tallarico, Andrea Natale, Stoffels, Steve, Posthuma, Niels, Magnone, Paolo, Marcon, Denis, Decoutere, Stefaan, Sangiorgi, Enrico, Fiegna, Claudio

Journal:

IEEE Transactions on Electron Devices

Année:

2018

Langue:

english

Fichier:

PDF, 1.57 MB

english, 2018

Hot-Carrier Degradation in Power LDMOS: Selective LOCOS- Versus STI-Based Architecture

Tallarico, Andrea Natale, Reggiani, Susanna, Depetro, Riccardo, Torti, Andrea Mario, Croce, Giuseppe, Sangiorgi, Enrico, Fiegna, Claudio

Journal:

IEEE Journal of the Electron Devices Society

Année:

2018

Langue:

english

Fichier:

PDF, 1.31 MB

english, 2018

[IEEE ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) - Cracow, Poland (2019.9.23-2019.9.26)] ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) - TCAD predictions of hot-electron injection in p-type LDMOS transistors

Giuliano, F., Depetro, R., Croce, G., Tallarico, A. N., Reggiani, S., Gnudi, A., Sangiorgi, E., Fiegna, C., Rossetti, M., Molfese, A., Manzini, S.

Année:

2019

Fichier:

PDF, 1.18 MB

2019

[IEEE 2020 IEEE International Reliability Physics Symposium (IRPS) - Dallas, TX, USA (2020.4.28-2020.5.30)] 2020 IEEE International Reliability Physics Symposium (IRPS) - Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors

Tallarico, A. N., Reggiani, S., Depetro, R., Croce, G., Sangiorgi, E., Fiegna, C.

Année:

2020

Fichier:

PDF, 479 KB

2020

Some crystallographic trends into the Na1+xZr2SixP3-xO12 System

Dr. A. Krajewski, R. Valmori, Dr. A. Fiegna

Journal:

Crystal Research and Technology

Année:

1984

Langue:

english

Fichier:

PDF, 555 KB

english, 1984

Reduced self-heating by strained silicon substrate engineering

A. O’Neill, R. Agaiby, S. Olsen, Y. Yang, P.-E. Hellstrom, M. Ostling, M. Oehme, K. Lyutovich, E. Kasper, G. Eneman, P. Verheyen, R. Loo, C. Claeys, C. Fiegna, E. Sangiorgi

Journal:

Applied Surface Science

Année:

2008

Langue:

english

Fichier:

PDF, 533 KB

english, 2008

Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs

Marco Alessandrini, David Esseni, Claudio Fiegna

Journal:

Solid-State Electronics

Année:

2004

Langue:

english

Fichier:

PDF, 335 KB

english, 2004

An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation

P. Palestri, S. Eminente, D. Esseni, C. Fiegna, E. Sangiorgi, L. Selmi

Journal:

Solid-State Electronics

Année:

2005

Langue:

english

Fichier:

PDF, 321 KB

english, 2005

Foreword

Enrico Sangiorgi, Claudio Fiegna

Journal:

Solid-State Electronics

Année:

2006

Langue:

english

Fichier:

PDF, 51 KB

english, 2006

Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections

I. Riolino, M. Braccioli, L. Lucci, P. Palestri, D. Esseni, C. Fiegna, L. Selmi

Journal:

Solid-State Electronics

Année:

2007

Langue:

english

Fichier:

PDF, 198 KB

english, 2007

The effects of scaling on the performance of small-signal MOS amplifiers

Claudio Fiegna

Journal:

Solid-State Electronics

Année:

2002

Langue:

english

Fichier:

PDF, 264 KB

english, 2002

Measurements of low field mobility in ultra-thin SOI n- and p-MOSFETs

M Mastrapasqua, D Esseni, G.K Celler, C Fiegna, L Selmi, E Sangiorgi

Journal:

Microelectronic Engineering

Année:

2001

Langue:

english

Fichier:

PDF, 405 KB

english, 2001

Device simulation for decananometer MOSFETs

Enrico Sangiorgi, Pierpaolo Palestri, David Esseni, Claudio Fiegna, Antonio Abramo, Luca Selmi

Journal:

Materials Science in Semiconductor Processing

Année:

2003

Langue:

english

Fichier:

PDF, 286 KB

english, 2003

Si–SiO2 interface band-gap transition – effects on MOS inversion layer

Stanislav Markov, Peter V. Sushko, Scott Roy, Claudio Fiegna, Enrico Sangiorgi, Alexander L. Shluger, Asen Asenov

Journal:

physica status solidi (a)

Année:

2008

Langue:

english

Fichier:

PDF, 786 KB

english, 2008

Evolution of an obligate social cheater to a superior cooperator

Fiegna, Francesca, Yu, Yuen-Tsu N., Kadam, Supriya V., Velicer, Gregory J.

Journal:

Nature

Année:

2006

Langue:

english

Fichier:

PDF, 268 KB

english, 2006

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Numerical simulation and modeling of thermal transient in silicon power devices

Magnone, P., Fiegna, C., Greco, G., Bazzano, G., Rinaudo, S., Sangiorgi, E.

Année:

2012

Langue:

english

Fichier:

PDF, 166 KB

english, 2012

Characterization and Modeling of Hot Carrier-Induced Variability in Subthreshold Region

Magnone, P., Crupi, F., Wils, N., Tuinhout, H. P., Fiegna, C.

Journal:

IEEE Transactions on Electron Devices

Année:

2012

Langue:

english

Fichier:

PDF, 866 KB

english, 2012